 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| TGF2961-SD 1 Watt DC-4 GHz Packaged HFET Key Features * Frequency Range: DC-4 GHz Nominal 900 MHz Application Board Performance: * TOI: 44 dBm * 31 dBm Psat, 30 dBm P1dB * Gain: 18 dB * Input Return Loss: -15 dB * Output Return Loss: -7 dB * Bias: Vd = 8 V, Id = 200 mA, Vg = -1.0 V (Typical) * Package Dimensions: 4.5 x 4 x 1.5 mm 900 MHz Application Board Performance Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical 20 20 15 Gain (dB) 15 Gain IRL ORL 5 0 -5 -10 -15 IRL and ORL (dB) 10 * * * * * Primary Applications Cellular Base Stations WiMAX Wireless Infrastructure IF & LO Buffer Applications RFID Product Description The TGF2961-SD is a high performance 1-watt Heterojunction GaAs Field Effect Transistor (HFET) housed in a low cost SOT89 surface mount package. The device's ideal operating point is at a drain bias of 8 V and 200 mA. At this bias at 900 MHz when matched into 50 ohms using external components, this device is capable of 18 dB of gain, 30 dBm of saturated output power, and 44 dBm of output IP3 Evaluation boards at 900 MHz, 1900 MHz and 2100 MHz available on request. RoHS and Lead-Free compliant 10 5 0.6 0.7 0.8 0.9 1 1.1 1.2 Frequency (GHz) 31 -20 Psat (dBm) 30 29 0.86 0.87 0.88 0.89 0.91 0.92 0.93 0.94 0.95 0.96 0.97 0.9 Freq (GHz) Datasheet subject to change without notice. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com August 2007 (c) Rev A 1 Table I Absolute Maximum Ratings 1/ Symbol Vd-Vg Vd Vg Id Ig Pin Drain Voltage Gate Voltage Range Drain Current Gate Current Range Input Continuous Wave Power TGF2961-SD Notes 2/ Parameter Drain to Gate Voltage Value 17 V 9V -5 to 0 V 780 mA -2.4 to 17.8 mA 29 dBm 2/ 2/ 1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device and / or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. Combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum power dissipation listed in Table IV. 2/ Table II Recommended Operating Conditions Symbol Vd Idq Id Vg Drain Voltage Drain Current Drain Current at Psat Gate Voltage Parameter 1/ Typical Value 8V 200 mA 260 mA -1.0 V 1/ See assembly diagram for bias instructions. 2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com August 2007 (c) Rev A TGF2961-SD Table III RF Characterization Table Bias: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V, typical SYMBOL Gain PARAMETER Small Signal Gain TEST CONDITIONS 900 MHz 1900 MHz 2100 MHz 900 MHz 1900 MHz 2100 MHz 900 MHz 1900 MHz 2100 MHz 900 MHz 1900 MHz 2100 MHz 900 MHz 1900 MHz 2100 MHz 900 MHz 1900 MHz 2100 MHz 900 MHz 1900 MHz 2100 MHz NOMINAL 18 15 15 -15 -15 -15 -6 -6 -6 30.5 31 31 29.5 30 30 44 44 44 3.3 4.3 4.3 UNITS dB NOTES 1/ 2/ 3/ 1/ 2/ 3/ 1/ 2/ 3/ 1/ 2/ 3/ 1/ 2/ 3/ 1/ 2/ 3/ 1/ 2/ 3/ IRL Input Return Loss dB ORL Output Return Loss dB Psat Saturated Output Power Output Power @ 1dB Compression Output TOI dBm P1dB dBm TOI dBm NF Noise Figure dB 1/ 2/ 3/ Using 900 MHz Application Board. Using 1900 MHz Application Board Using 2100 MHz Application Board 3 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com August 2007 (c) Rev A TGF2961-SD Table IV Power Dissipation and Thermal Properties Parameter Maximum Power Dissipation Test Conditions Tbaseplate = 70 C Value Pd = 2.7 W Tchannel = 175 C Tm = 8.7E+06 Hrs jc = 39 ( C/W) Tchannel = 147 C Tm = 1.86E+08 Hrs jc = 39 ( C/W) Tchannel = 127 C Tm = 2.27E+09 Hrs Notes 1/ 2/ Thermal Resistance, jc Vd = 8 V Id = 200 mA Pd = 1.6 W Tbaseplate = 85 C Vd = 8 V Id = 260 mA Pout = 30 dBm Pd = 1.08 W Tbaseplate = 85 C Thermal Resistance, jc Under RF Drive Mounting Temperature Storage Temperature 1/ See `Typical Solder Reflow Profiles' Table -65 to 150 C For a median life of 8.7E6 hours, Power Dissipation is limited to Pd(max) = (175 - Tbase / jc C C) 2/ Channel operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that channel temperatures be maintained at the lowest possible levels. Power De-Rating Curve 6 Tm=8.7E6 Hrs Power Dissipated (W) 5 4 3 2 1 0 -50 -25 0 25 50 75 100 125 150 175 200 Baseplate Temp (C) 4 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com August 2007 (c) Rev A TGF2961-SD Gmax, Max Stable Gain, K factor Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical 35 30 Gmax and MSG - dB 25 20 15 10 5 0 0 1 2 3 4 5 6 7 Freq (GHz) Gmax Max Stable Gain K factor 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 K factor 5 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com August 2007 (c) Rev A TGF2961-SD Measured Data 900 MHz Application Board Bias conditions: Vd = 8 V, Id = 200 mA, Vg = -1.0 V Typical 25 Gain (dB) 20 15 10 0.6 0.7 0.8 0.9 1 1.1 1.2 Frequency (GHz) 0 -5 IRL and ORL (dB) -10 -15 -20 -25 -30 0.6 0.7 0.8 0.9 1 1.1 1.2 Frequency (GHz) 6 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com August 2007 (c) Rev A IRL ORL TGF2961-SD Measured Data 900 MHz Application Board Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical 31 P1dB (dBm) 30 29 -40 deg C 25 deg C 85 deg C 28 0.86 0.88 0.90 0.92 0.94 0.98 1.00 Freq (GHz) 32 Psat (dBm) 31 30 -40 deg C +25 deg C +85 deg C 29 0.82 0.84 0.86 0.88 0.90 0.92 0.94 0.96 Freq (GHz) 7 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com August 2007 (c) Rev A TGF2961-SD Measured Data 900 MHz Application Board Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical 46 OIP3(dBm) 45 44 43 0.86 0.87 0.88 0.89 0.9 0.91 0.92 0.93 0.94 0.95 0.96 0.97 Freq(GHz) 8 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com August 2007 (c) Rev A TGF2961-SD Measured Data 1900 MHz Application Board Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical 20 Gain (dB) 15 10 5 1.7 1.8 1.9 2 2.1 2.2 2.3 Frequency (GHz) 0 -5 IRL and ORL (dB) -10 -15 -20 -25 -30 1.7 1.8 1.9 2 2.1 2.2 2.3 Frequency (GHz) 9 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com August 2007 (c) Rev A IRL ORL TGF2961-SD Measured Data 1900 MHz Application Board Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical 31 P1dB (dBm) 30 29 -40 deg C 25 deg C 85 deg C 28 1.92 1.93 1.94 1.95 1.96 1.97 1.98 1.99 2.02 2.00 2.04 Freq (GHz) 32 Psat (dBm) 31 30 -40 deg C +25 deg C +85 deg C 29 1.88 1.90 1.92 1.94 1.96 1.98 2.00 Freq (GHz) 10 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com August 2007 (c) Rev A TGF2961-SD Measured Data 1900 MHz Application Board Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical 46 OIP3(dBm) 45 44 43 1.92 1.93 1.94 1.95 1.96 1.97 1.98 1.99 2.00 Freq(GHz) 11 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com August 2007 (c) Rev A TGF2961-SD Measured Data 2100 MHz Application Board Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical 20 Gain (dB) 15 10 5 1.9 2 2.1 2.2 2.3 2.4 2.5 Frequency (GHz) 0 -5 IRL and ORL (dB) -10 IRL -15 ORL -20 -25 -30 1.9 2 2.1 2.2 2.3 2.4 2.5 Frequency (GHz) 12 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com August 2007 (c) Rev A TGF2961-SD Measured Data 2100 MHz Application Board Bias conditions: Vd = 8 V, Id = 200 mA, Vg = -1.0 V Typical 31 P1dB (dBm) 30 29 -40 deg C 25 deg C 85 deg C 28 2.06 2.08 2.10 2.12 2.14 2.16 2.18 2.20 2.20 2.22 2.22 Freq (GHz) 32 Psat (dBm) 31 30 -40 deg C +25 deg C +85 deg C 29 2.06 2.08 2.10 2.12 2.14 2.16 2.18 Freq (GHz) 13 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com August 2007 (c) Rev A TGF2961-SD Measured Data 2100 MHz Application Board Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical 46 OIP3 (dBm) 45 44 43 2.10 2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.18 Freq(GHz) 14 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com August 2007 (c) Rev A TGF2961-SD Electrical Schematic 2 1 2 3 Pin 1 2 3 Signal RF In (Gate) Gnd (Source) RF Out (Drain) Bias Procedures Bias-up Procedure Vg set to -2.5 V Vd set to +8 V Adjust Vg more positive until Idq is 200 mA. This will be ~ Vg = -1.0 V Apply RF signal to input Bias-down Procedure Turn off RF signal at input Reduce Vg to -2.5V. Ensure Id ~ 0 mA Turn Vd to 0 V Turn Vg to 0 V 15 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com August 2007 (c) Rev A TGF2961-SD Mechanical Drawing B K 2 D 1 J I F E 2 3 J A C H G 3 2 1 Dim A B C D E F G H I J K Millimeters Min 1.40 4.40 2.29 3.94 Max 1.60 4.60 2.60 4.25 3.00 Center-Center 1.50 Center-Center 0.35 0.89 0.44 0.36 1.50 0.44 1.20 0.56 0.48 1.83 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 16 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com August 2007 (c) Rev A TGF2961-SD Evaluation Board Evaluation Board L2 R1 Gnd Vg Vd C6 C8 C10 C5 C7 C9 L3 RF IN RF OUT C3 L1 C1 R2 D/ Q1 C2 C4 Evaluation Board Schematic Vg C6 C8 C10 R1 RF IN Z0 = 50 C3 L1 C1 L2 Q1 R2 Vd C5 C7 C9 L3 D/ C4 C2 RF OUT Z0 = 50 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 17 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com August 2007 (c) Rev A TGF2961-SD Evaluation Board Bill of Materials Ref Des L1 C1 C2 D L2, L3 C3,C4 C5, C6 C7, C8 C9, C10 R1 R2 Q1 (PCB) Value for Freq (MHz) 900 5.6 nH 8.2 pF 1.8 pF 18.8 mm 36o@0.9 GHz 1900 1.2 nH 1.2 pF 1.2 pF 8.0 mm 33o@1.9 GHz 50 nH 150 pF 0.1 F 0.01 F 1000 pF 50 Ohm 3 Ohm --2100 1.2 nH 0.9 pF 1.2 pF 5.2 mm 23o@2.1 GHz Description 0603 ACCU-L AVX Inductor 0603 ACCU-P AVX Capacitor 0603 ACCU-P AVX Capacitor Physical Location for C2 50 Ohm Transmission Line Length D 0805 Inductor 0603 Capacitor 0603 Capacitor 0603 Capacitor 0603 Capacitor 0805 1/8 Watt Resistor 0805 1/8 Watt Resistor TriQuint TGF2961-SD Packaged FET 28 mil thick GETEK GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 18 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com August 2007 (c) Rev A TGF2961-SD Recommended Assembly Diagram 2.6 mm O CLEARANCE HOLE FOR 2-56 SOCKET HEAD CAP SCREW (2/) 7.6 X 7.6 mm COPPER AREA (3/) ARRAY OF VIAS (1/) 4.6 mm O SOLDERMASK KEEPOUT FOR 2-56 LOCKWASHER (4/) SOT-89 PACKAGE OUTLINE 1 2 3 Assembly Notes 1/ The lowest possible thermal and electrical resistance for Pin 2 is critical for optimal performance. The array of vias under Pin 2 should be as small and as dense as the PC board fabrication permits. 0.30 mm diameter vias on 0.60 mm center to center spacing is recommended. 2/ Mounting screws in the vicinity of the package improve heat transfer to the chassis or to a heat spreader located on the backside of the PC board. Shown are clearance holes and solder mask keepout zone for a 256 socket head cap screw. Use of a split lockwasher and proper torque on the screw will prevent compression damage to the PC board. 3/ Use of 1 oz copper (min) in the PC board construction is recommended. 4/ For lowest thermal resistance, solder mask must be removed where the copper traces on the PC board contact the heat spreader. In this example, this would be a) front and backsides of the PC board around the 2-56 screw and b) front of the PC board around package pin 2. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 19 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com August 2007 (c) Rev A TGF2961-SD Recommended Surface Mount Package Assembly Proper ESD precautions must be followed while handling packages. Clean the board with acetone. Rinse with alcohol. Allow the circuit to fully dry. TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow oven vendors' recommendations when developing a solder reflow profile. Typical solder reflow profiles are listed in the table below. Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot placement. The volume of solder paste depends on PCB and component layout and should be well controlled to ensure consistent mechanical and electrical performance. Clean the assembly with alcohol. Typical Solder Reflow Profiles Reflow Profile Ramp-up Rate Activation Time and Temperature Time above Melting Point Max Peak Temperature Time within 5 C of Peak Temperature Ramp-down Rate SnPb 3 C/sec 60 - 120 sec @ 140 - 160 C 60 - 150 sec 240 C 10 - 20 sec 4 - 6 C/sec Pb Free 3 C/sec 60 - 180 sec @ 150 - 200 C 60 - 150 sec 260 C 10 - 20 sec 4 - 6 C/sec Ordering Information Part TGF2961-SD, TAPE AND REEL Package Style SOT-89, TAPE AND REEL 20 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com August 2007 (c) Rev A |
Price & Availability of TGF2961-SD
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |